{"title":"面向片上系统集成的宽带平面偏置三通双反射镜设计","authors":"Rahul Yadav, S. Preu, A. Penirschke","doi":"10.1109/mms55062.2022.9825569","DOIUrl":null,"url":null,"abstract":"Terahertz (THz) domain is quickly developing with various applications such as beam diagnostics at particle accelerators, spectroscopy, communications, space science, etc. However, often requiring fast intermediate frequency (IF) electronics. We present the design of a double mirror stub (DMS) based a planar broadband bias tee having an isolation port S31 with 14.45 GHz bandwidth below −10 dB and S33 with 13.1 GHz bandwidth above −2 dB. CST simulation and measured results are in very good agreement. The bias tee will be a part of a new generation of on-chip THz detectors based on zero-bias Schottky diode and high electron mobility field effect transistor (HEMT).","PeriodicalId":124088,"journal":{"name":"2022 Microwave Mediterranean Symposium (MMS)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Double Mirror Stub Design of Broadband Planar Bias Tee for System on Chip Integration\",\"authors\":\"Rahul Yadav, S. Preu, A. Penirschke\",\"doi\":\"10.1109/mms55062.2022.9825569\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Terahertz (THz) domain is quickly developing with various applications such as beam diagnostics at particle accelerators, spectroscopy, communications, space science, etc. However, often requiring fast intermediate frequency (IF) electronics. We present the design of a double mirror stub (DMS) based a planar broadband bias tee having an isolation port S31 with 14.45 GHz bandwidth below −10 dB and S33 with 13.1 GHz bandwidth above −2 dB. CST simulation and measured results are in very good agreement. The bias tee will be a part of a new generation of on-chip THz detectors based on zero-bias Schottky diode and high electron mobility field effect transistor (HEMT).\",\"PeriodicalId\":124088,\"journal\":{\"name\":\"2022 Microwave Mediterranean Symposium (MMS)\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 Microwave Mediterranean Symposium (MMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/mms55062.2022.9825569\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Microwave Mediterranean Symposium (MMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/mms55062.2022.9825569","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Double Mirror Stub Design of Broadband Planar Bias Tee for System on Chip Integration
Terahertz (THz) domain is quickly developing with various applications such as beam diagnostics at particle accelerators, spectroscopy, communications, space science, etc. However, often requiring fast intermediate frequency (IF) electronics. We present the design of a double mirror stub (DMS) based a planar broadband bias tee having an isolation port S31 with 14.45 GHz bandwidth below −10 dB and S33 with 13.1 GHz bandwidth above −2 dB. CST simulation and measured results are in very good agreement. The bias tee will be a part of a new generation of on-chip THz detectors based on zero-bias Schottky diode and high electron mobility field effect transistor (HEMT).