基于预处理CMOS衬底的单片AlN PMUT

J. Mufioz, F. Torres, A. Uranga, V. Tsanov, N. Bamiol, E. Marigó, M. Soundara-Pandian
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引用次数: 10

摘要

本文提出了一种与预处理CMOS衬底兼容的AlN压电微机械超声换能器。与传统的pmut相比,鉴于该pmut位于CMOS预处理晶圆之上,它将在制造方面提供优势,而无需使用晶圆键合的复杂性。这些优势将在阵列中得到明显体现,因为pmut之间可以实现更小的间距,而不需要添加键垫,这将实现更高的填充因子,同时具有降低成本、面积和功耗的优势。与最先进的AlN pmut相比,液体中声压的脉冲回波测量值具有竞争力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Monolithical AlN PMUT on Pre-Processed CMOS Substrate
In this paper, an AlN piezoelectric micromachined ultrasonic transducer (PMUT) compatible with pre-processed CMOS substrate is presented. Compared to traditional PMUTs, given that this one is on top of a CMOS pre-processed wafer, it will provide benefits in terms of fabrication without the complexity to use wafer bonding. These benefits will be clearly reflected i.e. in arrays, since the smaller pitch achievable between PMUTs, with no added bond-pads needed, will enable a higher fill factor with the advantages of reduced cost, area and power consumption. Pulse echo measurements of acoustic pressure in liquid provide competitive values compared with the state-of-the-art AlN PMUTs.
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