{"title":"叔丁基larsin在InP上生长InGaAs的MOVPE","authors":"M. Abdalla, D. Kenneson, W. Powazinik","doi":"10.1109/ICIPRM.1990.202996","DOIUrl":null,"url":null,"abstract":"The growth by low-pressure metalorganic vapor phase epitaxy (MOVPE) of lattice-matched InGaAs on InP substrates using tertiarybutylarsine (TBA) as the arsenic source is reported. The grown layers were uniform in composition and are consistently n-type with low background carrier concentration (2-3*10/sup 15//cm/sup 3/). Room temperature mobility as high as 11200 cm/sup 2//V-s with a corresponding 77 K mobility of 57000 cm/sup 2//V-s was measured. Photoluminescence (20 K) gave a strong narrow peak (FWHM=3.1 meV) with no evidence of carbon incorporation.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MOVPE growth of InGaAs on InP using tertiarybutylarsine\",\"authors\":\"M. Abdalla, D. Kenneson, W. Powazinik\",\"doi\":\"10.1109/ICIPRM.1990.202996\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The growth by low-pressure metalorganic vapor phase epitaxy (MOVPE) of lattice-matched InGaAs on InP substrates using tertiarybutylarsine (TBA) as the arsenic source is reported. The grown layers were uniform in composition and are consistently n-type with low background carrier concentration (2-3*10/sup 15//cm/sup 3/). Room temperature mobility as high as 11200 cm/sup 2//V-s with a corresponding 77 K mobility of 57000 cm/sup 2//V-s was measured. Photoluminescence (20 K) gave a strong narrow peak (FWHM=3.1 meV) with no evidence of carbon incorporation.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.202996\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.202996","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MOVPE growth of InGaAs on InP using tertiarybutylarsine
The growth by low-pressure metalorganic vapor phase epitaxy (MOVPE) of lattice-matched InGaAs on InP substrates using tertiarybutylarsine (TBA) as the arsenic source is reported. The grown layers were uniform in composition and are consistently n-type with low background carrier concentration (2-3*10/sup 15//cm/sup 3/). Room temperature mobility as high as 11200 cm/sup 2//V-s with a corresponding 77 K mobility of 57000 cm/sup 2//V-s was measured. Photoluminescence (20 K) gave a strong narrow peak (FWHM=3.1 meV) with no evidence of carbon incorporation.<>
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