石墨烯掺杂ZnO薄膜上的金属-半导体-金属结构

Harsha Sai Kalyanapu, Nandan Vemuri, Venkata Pavan Sai Hemanth Rayapati, A. Yadav, Gnana Prasanna Yella
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摘要

石墨烯的独特特性使其成为最有前途的纳米材料之一,它不仅是最薄的材料,也是最坚固的材料之一。它是一种极好的导电体,比任何其他材料的导电性能都要好。聚合物复合材料代替聚合物在许多应用中得到应用。高石墨烯浓度的稳定石墨烯分散体近年来受到了广泛的关注。为了增强石墨烯的分散性,制备稳定的高浓度石墨烯溶液,使用了1-乙烯基- 2吡咯烷酮。为了制造ZnO/石墨烯复合材料,将这种稳定的石墨烯溶液与ZnO结合。采用溶胶-凝胶法制备了一层石墨烯掺杂ZnO复合材料。随着石墨烯的加入,ZnO的电导率显著提高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Metal-Semiconductor – Metal structure on Graphene Doped ZnO Thin Film
A unique combination of its extraordinary qualities has made graphene one of the most promising nanomaterials, it is not only the thinnest material, but also one of the strongest materials. It is a superb electrical conductor and does so better than any other material. Instead of using polymers, polymer composites are employed in numerous applications. Due to its uses, stable graphene dispersions with high graphene concentrations have received a lot of attention recently. To enhance the dispersion of graphene and create a stable graphene solution with a high concentration, 1-vinyl 2pyrrolidone was used. To create ZnO/graphene composites, this stable graphene solution was combined with ZnO. A sol-gel method was used to deposit a thin coating of Graphene doped ZnO composite. With the addition of graphene, ZnO’s electrical conductivity was significantly increased.
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