具有堆叠fet拓扑的ka波段低损耗高功率SPDT开关

2022 7th International Conference on Computer and Communication Systems (ICCCS) Pub Date : 2022-04-22 DOI:10.1109/icccs55155.2022.9846188

Ze‐Yuan Fan, Shouxian Mou

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引用次数: 1

摘要

提出了一种具有低插入损耗和超高输出功率的紧凑型ka波段收发开关。并联拓扑结构可实现低插入损耗，而采用堆叠fet拓扑结构可获得高输出功率。该开关采用0.15 μm砷化镓(GaAs) pHEMT技术制作，在36 GHz时测量到的最大插入损耗为1.42 dB。测量输入1db功率压缩点(P1dB)超过32dbm。所提出的开关也具有紧凑的尺寸为1.6 mm × 0.71 mm。据我们所知，所提出的开关在ka频段具有相同输入P1dB电平的其他HEMT开关中具有最低的插入损耗。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Ka-Band Low Loss and High Power SPDT Switch with Stacked-FET Topology

A compact Ka-band T/R switch with low insertion loss and ultra-high output power is presented. A shunt topology is used to achieve low insertion loss while high output power is obtained by using stacked-FET topology. The switch was fabricated by using 0.15-μm Gallium Arsenide (GaAs) pHEMT technology, with a maximum measured insertion loss of 1.42 dB at 36 GHz. The measured input 1-dB power compression point (P1dB) exceeds 32 dBm. The proposed switch also has a compact size of 1.6 mm × 0.71 mm. To the best of our knowledge, the proposed switch has the lowest insertion loss among the other HEMT switches with the same input P1dB level in Ka-band.

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来源期刊

2022 7th International Conference on Computer and Communication Systems (ICCCS)

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