高度可扩展的FBC(浮动体单元)，采用25nm BOX结构，适用于嵌入式DRAM应用

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. Pub Date : 2004-06-15 DOI:10.1109/VLSIT.2004.1345435

T. Shino, I. Higashi, K. Fujita, T. Ohsawa, Y. Minami, T. Yamada, M. Morikado, H. Nakajima, K. Inoh, T. Hamamoto, A. Nitayama

{"title":"高度可扩展的FBC(浮动体单元)，采用25nm BOX结构，适用于嵌入式DRAM应用","authors":"T. Shino, I. Higashi, K. Fujita, T. Ohsawa, Y. Minami, T. Yamada, M. Morikado, H. Nakajima, K. Inoh, T. Hamamoto, A. Nitayama","doi":"10.1109/VLSIT.2004.1345435","DOIUrl":null,"url":null,"abstract":"A novel FBC with 25nm-thick BOX (buried oxide) structure has been developed. A feature of new FBC is scalability in the case of thinner SOI, which promises embedded DRAM on SOI in future generations. Using 96Kbit array, the pause time distribution of FBC is demonstrated for the first time. Due to simplified structure, pause time variation of new FBC is significantly suppressed compared with conventional FBC.","PeriodicalId":297052,"journal":{"name":"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"Highly scalable FBC (Floating Body Cell) with 25nm BOX structure for embedded DRAM applications\",\"authors\":\"T. Shino, I. Higashi, K. Fujita, T. Ohsawa, Y. Minami, T. Yamada, M. Morikado, H. Nakajima, K. Inoh, T. Hamamoto, A. Nitayama\",\"doi\":\"10.1109/VLSIT.2004.1345435\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel FBC with 25nm-thick BOX (buried oxide) structure has been developed. A feature of new FBC is scalability in the case of thinner SOI, which promises embedded DRAM on SOI in future generations. Using 96Kbit array, the pause time distribution of FBC is demonstrated for the first time. Due to simplified structure, pause time variation of new FBC is significantly suppressed compared with conventional FBC.\",\"PeriodicalId\":297052,\"journal\":{\"name\":\"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2004.1345435\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2004.1345435","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 28

摘要

研制了一种具有25nm厚的BOX(埋氧化)结构的新型FBC。新FBC的一个特点是在更薄的SOI情况下的可扩展性，这承诺在未来几代SOI上嵌入DRAM。利用96Kbit阵列，首次演示了FBC的暂停时间分布。由于结构的简化，新型FBC与传统FBC相比，暂停时间的变化得到了显著抑制。

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Highly scalable FBC (Floating Body Cell) with 25nm BOX structure for embedded DRAM applications

A novel FBC with 25nm-thick BOX (buried oxide) structure has been developed. A feature of new FBC is scalability in the case of thinner SOI, which promises embedded DRAM on SOI in future generations. Using 96Kbit array, the pause time distribution of FBC is demonstrated for the first time. Due to simplified structure, pause time variation of new FBC is significantly suppressed compared with conventional FBC.

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来源期刊

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.

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