倒置电荷层对三材料双栅隧道场效应管影响的仿真研究

2016 9th International Conference on Electrical and Computer Engineering (ICECE) Pub Date : 2016-12-01 DOI:10.1109/ICECE.2016.7853923

Samia Safa, S. L. Noor, M. R. Khan

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引用次数: 0

摘要

本文利用二维TCAD模拟研究了倒置电荷层对三材料双栅隧道场效应管(TFET)的影响。仿真结果表明，由于逆温层的形成，带间隧道电流趋于饱和。反转电荷引起表面电位的固定，使漏极电流对栅极电压的响应较小。定量地测量了源极和漏极对逆温层形成的贡献。还考察了不同器件参数对反转层形成的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Simulation-based study on the effect of inversion charge layer on triple material double gate Tunnel FET

The impact of inversion charge layer on triple material double gate (TMDG) Tunnel FET (TFET) has been inspected in this work by using 2D TCAD simulations. Simulation results show that band-to-band tunneling current saturates due to inversion layer formation. Inversion charges cause the pinning of surface potential and make drain current less responsive to gate voltage. The contribution of source and drain in forming the inversion layer is measured quantitatively. The influence of different device parameters on inversion layer formation has also been inspected.

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2016 9th International Conference on Electrical and Computer Engineering (ICECE)

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