基于InAlAs/InGaAs变质HEMT的高转换增益毫米波光电混频器

MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003. Pub Date : 2003-09-10 DOI:10.1109/MWP.2003.1422838

Hyo-soon Kang, Chang-Soon Choi, W. Choi, Dac-Hyun Kim, K. Seo

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引用次数: 0

摘要

实验研究了在GaAs衬底上制备的InAlAs/InGaAs变质HEMT (m-HEMT)作为毫米波光电混频器。当本振(LO)功率为0 dBm时，最大内部转换增益为18.17 dB。m-HEMT具有宽的LO频率范围，可以很好地扩展到毫米波频段。我们还测量了作为光电混频器的m-HEMT的杂散自由动态范围，其值约为96 dBHz/sup 2/3/。

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High conversion gain millimeter-wave optoelectronic mixer based on InAlAs/InGaAs metamorphic HEMT

We experimentally investigate the InAlAs/InGaAs metamorphic HEMT (m-HEMT) on GaAs substrate as a millimeter-wave optoelectronic mixer. The maximum internal conversion gain of 18.17 dB is obtained with 0 dBm local oscillator (LO) power. The m-HEMT exhibits a wide LO frequency range which is well extended to the millimeter-wave band. We also measured the spurious free dynamic range of the m-HEMT as an optoelectronic mixer, whose value is about 96 dBHz/sup 2/3/.

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MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003.

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