Rishikesh A. Belekar, Reshim P. Nakade, Nitesh M. Chahande, Prof. S. K. Parchandekar
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引用次数: 2
摘要
本文介绍了一种半桥单元拓扑单相9电平MLDCL逆变器的实现方法。对于N级逆变器,需要(N-1)/2个半桥式电池,电压源数量相同。每个半桥式电池使用一个电压源。这N个电平是在输出的每半个周期中得到的。因此,在所有的2×N水平是在每个完整的周期。在提出的逆变器拓扑中,使用4个半桥单元和4个电压源,每个电压源为24V DC。这些半桥串联起来形成多电平直流链路(MLDCL)。直流链路每半周期提供9个电平。从这个链接得到的输出是单向的。H-Bridge网络通过Multilevel DC Link连接,用于将单向输出转换为双向输出。功率mosfet用作开关器件。每个半桥单元使用两个mosfet,而h桥需要四个mosfet。在这个逆变器拓扑中,使用了12个功率MOSFET以及每个MOSFET的栅极驱动电路。仿真和实验结果验证了半桥单元单相9电平MLDCL逆变器的工作原理,并测量了每种情况下的总谐波失真(THD)。
Single phase 9 level MLDCL inverter with half bridge cell topology: Performance analysis
This paper presents the implementation of Single Phase 9 level MLDCL Inverter with Half Bridge Cell topology. For N level inverter, (N-1)/2 half bridge cells are required with the same number of voltage sources. One voltage source is used for each half bridge cell. These N levels are obtained in every half cycle of the output. So, in all 2×N levels are obtained in each full cycle. In the proposed inverter topology, 4 Half Bridge Cells are used along with 4 voltage sources, each of 24V DC. These half bridges are connected in series to form a Multilevel DC Link (MLDCL). The DC link provides 9 levels in each half cycle. The output obtained from this link is of unidirectional nature. H-Bridge network is connected through Multilevel DC Link and used to convert unidirectional output into bidirectional output. Power MOSFETs are used as switching devices. Each half bridge cell uses two MOSFETs whereas H-Bridge requires four MOSFETs. In this inverter topology, twelve Power MOSFETs along with gate drive circuit for each MOSFET is used. The simulation and experimental results are included to verify the working principle of Single Phase 9 level MLDCL Inverter with Half Bridge Cell topology and the Total Harmonic Distortion (THD) in each case is measured.