Ku波段宽带低旁瓣双极化微带阵列天线

2019 IEEE 2nd International Conference on Electronic Information and Communication Technology (ICEICT) Pub Date : 2019-01-01 DOI:10.1109/ICEICT.2019.8846427

Wenjie Zhang, Hongpeng Sun, Guodong Song, Tao Zhang, Yan Wang, Zhuo Liu

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引用次数: 0

摘要

本文针对合成孔径雷达(SAR)的工程需求，提出了一种4 \ × 8$双极化微带天线阵列。天线单元结构的设计是基于常见的孔耦合天线。为了提高阻抗带宽，在馈线周围引入了金属化通孔。为了提高隔离度和减少交叉极化，对两层分压器网络进行了优化，并引入了反相技术。此外，利用阵列加权来控制天线的旁瓣电平。仿真结果表明，可以实现1.5 GHz的阻抗带宽，且驻波比小于1.5。两个端口之间的隔离度优于42 dB, E和H平面的交叉极化电平均大于50 dB。利用切比雪夫电流分布，在方位角方向旁瓣电平低于-20 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Ku Band Dual-Polarized Microstrip Array Antenna with Wide-Band and Low Side-Lobe

A $4 \times8$ dual-polarized microstrip antenna array in the need of synthetic aperture radar (SAR)’s engineering requirement is proposed in this thesis. The design of antenna element structure is based on the common aperture-coupled antennas. To improve the impedance bandwidth, some metalized via holes are introduced surrounded the feeding lines. To improve the isolation and reduce the cross polarization, two-layered power divider networks are optimized and antiphase technique is introduced. Furthermore, array weighting is used to control the side-lobe level of the antenna. The simulated results indicate that an impedance bandwidth of 1.5 GHz with VSWR less than 1.5 can be realized. The isolation between the two ports is better than 42 dB, and the cross-polarization levels are over 50 dB in both E and H planes. By using the Chebyshev current distribution, the side-lobe level in azimuth direction is lower than -20 dB.

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2019 IEEE 2nd International Conference on Electronic Information and Communication Technology (ICEICT)

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