InP:Fe MIS电容器时变光电容的频率响应

International Topical Meeting on Microwave Photonics. MWP '96 Technical Digest. Satellite Workshop (Cat. No.96TH8153) Pub Date : 1996-12-03 DOI:10.1109/MWP.1996.662086

P. Chakrabarti, M. Madheswaran

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引用次数: 0

摘要

本文报道了强度调制照明对InP金属绝缘体半导体(MIS)结构光电容的影响。建立了该器件的理论模型，并给出了基于该模型的结果，用于确定器件的时变光电容与调制入射照明强度的信号频率的依赖关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Frequency response of time-varying photocapacitance of an InP:Fe MIS capacitor

In this paper the effect of intensity modulated illumination on the photocapacitance of an InP metal-insulator-semiconductor (MIS) structure has been reported. A theoretical model of the device has been developed and the results obtained on the basis of the model have been presented for determining the dependence of the time-varying photocapacitance of the device on the frequency of the signal modulating the intensity of incident illumination.

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来源期刊

International Topical Meeting on Microwave Photonics. MWP '96 Technical Digest. Satellite Workshop (Cat. No.96TH8153)

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