电场和磁场对GaAs量子箱中电子的影响

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) Pub Date : 2000-06-24 DOI:10.1109/HKEDM.2000.904221

C. Chakraborty, P. Lai

{"title":"电场和磁场对GaAs量子箱中电子的影响","authors":"C. Chakraborty, P. Lai","doi":"10.1109/HKEDM.2000.904221","DOIUrl":null,"url":null,"abstract":"An attempt is made to investigate theoretically the effect of electric and magnetic fields on an n-GaAs semiconductor quantum box. The magnitude of energy shift due to the electric or magnetic field increases with the field strength. The shift is also more pronounced for larger box dimensions.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of electric and magnetic fields on electrons in a GaAs quantum box\",\"authors\":\"C. Chakraborty, P. Lai\",\"doi\":\"10.1109/HKEDM.2000.904221\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An attempt is made to investigate theoretically the effect of electric and magnetic fields on an n-GaAs semiconductor quantum box. The magnitude of energy shift due to the electric or magnetic field increases with the field strength. The shift is also more pronounced for larger box dimensions.\",\"PeriodicalId\":178667,\"journal\":{\"name\":\"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.2000.904221\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.2000.904221","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文尝试从理论上研究电场和磁场对n-GaAs半导体量子箱的影响。由电场或磁场引起的能量位移的大小随着场强的增加而增加。对于更大的盒子尺寸，这种转变也更为明显。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Effects of electric and magnetic fields on electrons in a GaAs quantum box

An attempt is made to investigate theoretically the effect of electric and magnetic fields on an n-GaAs semiconductor quantum box. The magnitude of energy shift due to the electric or magnetic field increases with the field strength. The shift is also more pronounced for larger box dimensions.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)

自引率

0.00%

发文量