电压依赖性门电容及其对低电源电压CMOS数字电路功率和时延估计的影响

K. Nose, S. Chae, T. Sakurai
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引用次数: 21

摘要

门电容对终端电压有复杂的电压依赖性,但对这种电压依赖性对功率和延迟的影响尚未得到充分研究,特别是在低压、低功耗设计中。通过引入有效栅极电容C/sub G、eff/,可以准确估计CMOS数字电路的功率和时延。C/sub G,eff/是V/sub TH//V/sub DD/的强函数,V/sub TH//V/sub DD/在低压区趋于增大。因此,在低电压、低功耗设计中,相对于氧化物电容的有效电容C/sub OX/正在减小。因此,考虑C/sub / G、eff/ in准确的功率和时延估计在未来变得更加重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Voltage dependent gate capacitance and its impact in estimating power and delay of CMOS digital circuits with low supply voltage
Gate capacitance has complex voltage dependency on terminal voltages but the impact of this voltage dependency of gate capacitance on power and delay has not been fully investigated, especially, in low-voltage, low-power designs. Introducing an effective gate capacitance, C/sub G,eff/ it is shown that the power and delay of CMOS digital circuit can be estimated accurately. C/sub G,eff/ is a strong function of V/sub TH//V/sub DD/ and V/sub TH//V/sub DD/ tends to increase in low-voltage region. Hence, the effective capacitance relative to oxide capacitance, C/sub OX/, is decreasing in low-voltage, low-power designs. Therefore, considering C/sub G,eff/ in accurate power and delay estimation becomes more important in the future.
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