[3D]沟槽的雾状沉积[d] ram和Frams III。PZT薄膜和PZT纳米管

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI:10.1109/ISAF.2007.4393160

M. Miyake, J. Scott, X. Lou, F. Morrison, S. Motoyama, T. Tatsuta, O. Tsuji

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引用次数: 1

摘要

采用Samco MD-6060型液源雾化沉积(LSMCD)技术，在SiO2/Si衬底上制备了Pb(Zr,Ti)O3 (PZT)薄膜和纳米管。我们报道了透明铁电薄膜和纳米管的沉积和表征。在室温条件下沉积并在700℃下退火的PZT薄膜表现出良好的铁电性能，剩余极化约为15 μ c /cm2。侧壁的台阶覆盖率为59%，底壁覆盖率为79%。

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Misted Deposition of [3D] Trenches for Drams and Frams III. PZT Thin Films and PZT Nanotubes

Pb(Zr,Ti)O3 (PZT) thin films and nanotube were prepared on SiO2/Si substrates by liquid source misted chemical deposition (LSMCD) using Samco MD-6060 apparatus. We report the deposition and characterization of transparent ferroelectric thin films and nanotubes. PZT thin films deposited at ambient conditions and annealing at 700degC exhibit good ferroelectric properties with remanent polarisation of ca. 15 muC/cm2. The step coverage was 59% on the side wall and 79% on the bottom wall.

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2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics

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