单行载流子双异质结光电晶体管响应速度的新方法:基区双侧入射

Proceedings of 5th International Conference on Vehicle, Mechanical and Electrical Engineering Pub Date : 1900-01-01 DOI:10.5220/0008868604130415

Liang Chen

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引用次数: 0

摘要

本文介绍了一种提高单行载流子双异质结光电晶体管(UTC-DHPT)响应速度的新方法。详细分析表明，基区双侧入射比基区单侧入射具有更好的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A New Method on Response Speed of Uni-traveling-carrier Double Heterojunction Phototransistor: Bilateral Incidence from the Base Region

: In this paper, a new method to improve the response speed of an SiGe-based uni-traveling-carrier double heterojunction phototransistor (UTC-DHPT) are illustrated. The detailed analysis show that bilateral incidence from the base region has better performances than one incidence from the base region.

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Proceedings of 5th International Conference on Vehicle, Mechanical and Electrical Engineering

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