低通和带通频率特性射频避雷器LEMP保护效果的对比实验研究

Dongdong Wang, Xi Chen, Lan Gao
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引用次数: 0

摘要

介绍了频率特性为低通和带通的射频避雷器对雷电电磁脉冲(LEMP)防护效果的对比实验研究结果。结果表明,基于半导体浪涌保护间隙(SSPG)的低通避雷器比基于气体放电管(GDT)的低通避雷器具有更短的响应时间,带通避雷器的LEMP保护性能远优于低通避雷器。带通避雷器的残余脉冲幅度约为低通避雷器的1/10 ~ 1/5,具体数值由等效带通滤波器的下带抑制能力决定。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparative experimental research on the LEMP protection effects of RF surge arresters with low-pass and band-pass frequency characteristics
In this paper, we introduced the comparative experimental research results of lightning electromagnetic pulses (LEMP) protection effects of radio frequency (RF) surge arresters with low-pass and band-pass frequency characteristics. It can be conclude that the low-pass arrester based on semiconductor surge protection gap (SSPG) featured shorter response time in comparison with that based on gas discharge tubes (GDT), and the LEMP protection performance of band-pass arrestor was much better than that of the low-pass ones. The residual pulse amplitude of the band-pass arrester was about 1/10∼1/5 of the low-pass arresters, and the specific value was determined by the lower-side-band suppression capabilities of the equivalent band-pass filter.
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