SiC功率器件的发展开启了电力电子的新时代

2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2019-06-12 DOI:10.1109/EDSSC.2019.8754464

K. Ino, M. Miura, Y. Nakano, M. Aketa, Noriaki Kawamoto

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引用次数: 4

摘要

碳化硅(SiC) mosfet在各种电力电子系统(如电源，可再生能源，运输，加热，机器人和电力公用事业传输/分配)中的商业化引入，刚刚开启了电力电子的新时代。在这些系统中使用SiC功率器件可以实现显著的节能，因为与传统的硅(Si)功率器件相比，SiC功率器件的功耗要低得多。本文介绍了SiC功率晶体管与Si mosfet和igbt的比较研究进展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SiC Power Device Evolution Opening a New Era in Power Electronics

A new era in power electronics has been just opened by commercial introduction of silicon carbide (SiC) MOSFETs in a variety of power electronic systems such as power supplies, renewable energy, transportation, heating, robotics, and electric utility transmission/distribution. The utilization of SiC power devices in these systems can enable significant energy saving because of much lower power-loss devices compared to conventional silicon (Si) power devices. In this paper the progress of SiC power transistors is presented in comparison with Si MOSFETs and IGBTs.

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来源期刊

2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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