最先进的EEPROM编程在耐久性退化过程中的窗口关闭仿真

2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS) Pub Date : 2021-06-28 DOI:10.1109/DTIS53253.2021.9505085

F. Matteo, R. Simola, Franck Melul, K. Coulié, J. Postel-Pellerin, A. Régnier

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引用次数: 1

摘要

电可擦可编程只读存储器(EEPROM)技术已经得到了广泛的研究，但EEPROM技术的计算机辅助设计(TCAD)仿真仍然需要改进，以应对半导体市场对质量要求的提高。本文研究了寿命退化对EEPROM编程窗口的影响以及相应的TCAD仿真。采用先进的校准TCAD模拟技术在110nm节点上对EEPROM循环过程中隧道(体)氧化物中捕获的负电荷分布进行了评估。我们的模拟得到的总负电荷演化与文献中发现的著名的捕获幂定律是一致的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Simulation of state of the art EEPROM programming window closure during endurance degradation

The Electrically Erasable Programmable Read Only Memory (EEPROM) technology has been widely studied but EEPROM Technology Computer Aided-Design (TCAD) simulations still need to be improved to handle the rises of the quality requirements of the semiconductor market. In this paper, the impact of endurance degradation on EEPROM programming window and the corresponding TCAD simulation are investigated. Advanced calibrated TCAD simulation on 110nm node is used to evaluate the distribution of negative charges trapped in the tunnel (bulk) oxide during EEPROM cycling. The total negative charge evolution found by our simulation is in agreement with the well-known trapping power law found in the literature.

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2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)

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