未掺杂和掺杂Bi12GeO20的缺陷

M. Tapiero, J. Gies, N. Benjelloun, J. Launay, J. Zielinger
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引用次数: 0

摘要

优化Bi12Ge O20 (BGO)以获得更好的光折变性能,需要在材料加工、光折变特性研究和非线性实验的同时进行系统的物理化学和物理表征。一个主要方面是分析非故意和故意使用兴奋剂的影响。我们关心的是缺陷的物理特性。为此,我们使用了新的特殊的热光谱和光学光谱方法(1)。这些调查技术允许探测禁隙并监测物种的性质和浓度的变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Defects in Undoped and Doped Bi12GeO20
Optimization of Bi12Ge O20 (BGO) for better photorefractive performance requires a systematic physico-chemical and physical characterization in parallel with material processing, investigation of photorefractive properties and implementation of nonlinear experiments. A main aspect is to analyze the effects of unintentional and intentional doping. We are concerned by the physical characterization of defects. To this end we use novel special thermal and optical spectroscopic methods (1). These survey techniques allow to probe the forbidden gap and to monitor changes in the nature and concentration of the species.
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