使用等离子体表面改性,SAM涂层和接触位移化学镀在高度结构化表面上的3D光刻和沉积

W. Su, Sheng-Ta Lee, M. Tsai, W. Fang
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引用次数: 5

摘要

本研究提出了一种简单的工艺,可在复杂的三维基板表面共形上实现光刻和沉积。利用SAM涂层和等离子体处理实现了高结构表面的三维光刻和图像化。此外,采用接触位移化学镀(CDE)技术,实现了三维表面乃至悬浮微结构下方的选择性薄膜沉积。在实际应用中,Cu薄膜在Si衬底上进行保形镀和图案化,形成50μm~200μm深的空腔和54.7°~90°的侧壁。此外,悬浮微梁下的铜电极也被镀上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
3D Lithography and Deposition on Highly Structured Surfaces Using Plasma Surface Modification, SAM Coating, and Contact Displacement Electroless Plating
This study presents a simple process to realize the lithography and deposition on a complicated 3D substrate surface conformally. The 3D lithography and patterning on highly structured surface is implemented using the SAM coating and the plasma treatment. Moreover, the selective film deposition on 3D surface and even underneath the suspended microstructures is realized using the contact displacement electroless plating (CDE plating). In applications, the Cu film was conformally plated and patterned on a Si substrate with 50μm~200μm deep cavities and 54.7°~90° sidewalls. Moreover, the Cu electrode underneath suspended microbeams was also plated.
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