{"title":"用于x波段的自对准砷化镓功率介面晶体管","authors":"P. Baudet, M. Binet, D. Boccon-Gibod, L. Hollan","doi":"10.1109/EUMA.1978.332578","DOIUrl":null,"url":null,"abstract":"More than 1 W att output power has been achieved at 10 GHz with GaAs MESFETs which are produced using a self-alignment technique. Principal improvements in performances are due to an increased maximum operating voltage of the Schottky diodes. This is obtained with a graded doping profile and there is in addition an improved linearity of the MESFET's. A technique of interconnection of the sources by metallic columns through the substrate has been used and a similar structure using N+ columns instead of the metal will be proposed. These techniques simplify the mounting of the transistor and reduces the parasitic inductances in series with the sources.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Self-Aligned GaAs Power Mesfet's for X-Band\",\"authors\":\"P. Baudet, M. Binet, D. Boccon-Gibod, L. Hollan\",\"doi\":\"10.1109/EUMA.1978.332578\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"More than 1 W att output power has been achieved at 10 GHz with GaAs MESFETs which are produced using a self-alignment technique. Principal improvements in performances are due to an increased maximum operating voltage of the Schottky diodes. This is obtained with a graded doping profile and there is in addition an improved linearity of the MESFET's. A technique of interconnection of the sources by metallic columns through the substrate has been used and a similar structure using N+ columns instead of the metal will be proposed. These techniques simplify the mounting of the transistor and reduces the parasitic inductances in series with the sources.\",\"PeriodicalId\":429268,\"journal\":{\"name\":\"1978 8th European Microwave Conference\",\"volume\":\"81 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1978-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 8th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1978.332578\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 8th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1978.332578","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
More than 1 W att output power has been achieved at 10 GHz with GaAs MESFETs which are produced using a self-alignment technique. Principal improvements in performances are due to an increased maximum operating voltage of the Schottky diodes. This is obtained with a graded doping profile and there is in addition an improved linearity of the MESFET's. A technique of interconnection of the sources by metallic columns through the substrate has been used and a similar structure using N+ columns instead of the metal will be proposed. These techniques simplify the mounting of the transistor and reduces the parasitic inductances in series with the sources.
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