具有InxGa1−xAs应变还原层的自组装InAs/GaAs量子点分子

Asia Communications and Photonics Conference and Exhibition Pub Date : 2010-12-08 DOI:10.1117/12.887835

Y. Yu, L. R. Huang, P. Tian, D. Huang

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引用次数: 0

摘要

采用金属有机化学气相沉积的方法制备了具有InxGa1−xAs应变还原层的自组装横向InAs量子点分子(QDMs)。QDM的发射波长和宽带光致发光光谱存在红移现象，这使得QDM成为宽带光学器件的潜在候选器件。

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Self-assembled InAs/GaAs quantum dot molecules with InxGa1−xAs strain-reducing layer

Self-assembled lateral InAs quantum dot molecules (QDMs) with InxGa1−xAs strain-reducing layer are grown by metal-organic chemical vapor deposition. A redshift of emission wavelength and wideband photoluminescence spectra of QDMs are observed, which make QDM a potential candidate for broadband optical devices.

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Asia Communications and Photonics Conference and Exhibition

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