{"title":"甲烷基等离子体中InP的蚀刻","authors":"I. Adesida, E. Andideh, C. Jones, N. Finnegan","doi":"10.1109/ICIPRM.1990.203056","DOIUrl":null,"url":null,"abstract":"Analyses of InP and SiO/sub 2/ mask surfaces etched in CH/sub 4//H/sub 2/ plasma have been performed using X-ray photoelectron spectroscopy and Auger electron spectroscopy. A relatively thick polymer layer was detected on the mask surface, whereas polymer deposition on etched InP surface was insignificant even under plasma conditions designed to enhance polymer formation. Subsequent processing of etched InP in O/sub 2/ plasma followed by a dip in HCl/H/sub 2/O was found to be sufficient for obtaining clean surfaces with good stoichiometry.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Etching of InP in methane-based plasmas\",\"authors\":\"I. Adesida, E. Andideh, C. Jones, N. Finnegan\",\"doi\":\"10.1109/ICIPRM.1990.203056\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Analyses of InP and SiO/sub 2/ mask surfaces etched in CH/sub 4//H/sub 2/ plasma have been performed using X-ray photoelectron spectroscopy and Auger electron spectroscopy. A relatively thick polymer layer was detected on the mask surface, whereas polymer deposition on etched InP surface was insignificant even under plasma conditions designed to enhance polymer formation. Subsequent processing of etched InP in O/sub 2/ plasma followed by a dip in HCl/H/sub 2/O was found to be sufficient for obtaining clean surfaces with good stoichiometry.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203056\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203056","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analyses of InP and SiO/sub 2/ mask surfaces etched in CH/sub 4//H/sub 2/ plasma have been performed using X-ray photoelectron spectroscopy and Auger electron spectroscopy. A relatively thick polymer layer was detected on the mask surface, whereas polymer deposition on etched InP surface was insignificant even under plasma conditions designed to enhance polymer formation. Subsequent processing of etched InP in O/sub 2/ plasma followed by a dip in HCl/H/sub 2/O was found to be sufficient for obtaining clean surfaces with good stoichiometry.<>
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