模拟半导体中噪声电流的数值朗格万方法

2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2016-07-11 DOI:10.1109/NUSOD.2016.7547058

K. Jóźwikowski

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引用次数: 0

摘要

本文提出了一种确定半导体结构中噪声电流谱密度的数值方法。基于P. Handel的理论，我们考虑了由产生-重组(g-r)和散射过程引起的1/ f噪声源的广泛范围。除了不同机理引起的弹丸g-r噪声外，还包括扩散噪声和温度波动。此外，我们还在HgCdTe nBn长波探测器中发现了噪声电流主要产生的地方。

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Numerical Langevine-like method for modelling the noise currents in semiconductors

This paper presents a numerical method for determining the spectral density of noise current in semiconductor structures. Based on P. Handel's theory we have considered a wide range of sources of 1/ f noise caused both by generation-recombination (g-r) and scattering processes. In addition to the shot g-r noise caused by different mechanism, the diffusion noise and temperature fluctuations are also included. Moreover, we have found in HgCdTe nBn long wavelength detectors the place where the noise current is mainly generated.

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2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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