{"title":"导电薄膜的原位厚度监测器","authors":"S. A. Khan, J. Farmer, R. Gutmann, J. Borrego","doi":"10.1109/MWSYM.1992.188314","DOIUrl":null,"url":null,"abstract":"A microwave probe for measuring the thickness of conducting films has been fabricated and characterized. A difference of up to 20 dB has been demonstrated between the two extrema of very small and infinitely large sheet resistivity for conducting films deposited on Si. Since the return loss will change by this amount as film thickness is increased from zero, simulation results indicate that the probe should be very effective in measuring the thickness of typical adhesion layers/diffusion barriers in VLSI and as an end-point detector in metal etching.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"In situ thickness monitor for conducting films\",\"authors\":\"S. A. Khan, J. Farmer, R. Gutmann, J. Borrego\",\"doi\":\"10.1109/MWSYM.1992.188314\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A microwave probe for measuring the thickness of conducting films has been fabricated and characterized. A difference of up to 20 dB has been demonstrated between the two extrema of very small and infinitely large sheet resistivity for conducting films deposited on Si. Since the return loss will change by this amount as film thickness is increased from zero, simulation results indicate that the probe should be very effective in measuring the thickness of typical adhesion layers/diffusion barriers in VLSI and as an end-point detector in metal etching.<<ETX>>\",\"PeriodicalId\":165665,\"journal\":{\"name\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1992.188314\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 IEEE Microwave Symposium Digest MTT-S","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1992.188314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A microwave probe for measuring the thickness of conducting films has been fabricated and characterized. A difference of up to 20 dB has been demonstrated between the two extrema of very small and infinitely large sheet resistivity for conducting films deposited on Si. Since the return loss will change by this amount as film thickness is increased from zero, simulation results indicate that the probe should be very effective in measuring the thickness of typical adhesion layers/diffusion barriers in VLSI and as an end-point detector in metal etching.<>
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