CuInSe2薄膜光学特性的研究

M. Bhuiyan, A. Bhuiyan, A. Hossain, Z. Mahmood
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引用次数: 4

摘要

CuInSe2被认为是第二代太阳能电池中引人注目的半导体。研究铟硒薄膜的光学性质是评价其作为高效太阳能电池的完善性的必要条件。采用热共蒸发技术制备薄膜。本实验采用岛津1201型分光光度计。测定了这些薄膜在350 nm ~ 1100 nm波长范围内的光学性能。从实验中可以明显看出,与这些薄膜的吸收相比,这些薄膜的反射率和透射率可以忽略不计。薄膜材料的高吸收系数为104/cm,也支持了这一点。CuInSe2薄膜的带隙为1.1 eV。XRD和EDAX分析表明,CuInSe2薄膜本质上是多晶的,具有理想的化学计量组成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Studies on optical characteristics of CuInSe2 thin films
CuInSe2 is considered as a striking semiconductor for second generation solar cells. An investigation of optical properties of CuInSe2 thin films is essential to evaluate its perfectibility as high efficiency solar cells. The films were fabricated by thermal co-evaporation technique. For this experiment, a shimadzu spectrophotometer of model number 1201 is used. The optical properties of these films are determined for the wavelength range 350 nm–1100 nm. From the experiment it is evident that the reflectance and transmittance of the films are negligible in comparison to the absorption of these films. The high absorption coefficient of the order of 104/cm of the film material also supports this. The band gap of the CuInSe2 films was evaluated to be 1.1 eV. From XRD and EDAX analysis it is evident that CuInSe2 films are polycrystalline in nature having ideal stoichiometric composition.
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