高延迟密度单片超低损耗Si3N4 / Si光子平台

2023 IEEE Silicon Photonics Conference (SiPhotonics) Pub Date : 2023-04-01 DOI:10.1109/SiPhotonics55903.2023.10141956

Brian Mattis, T. Huffman, Bryan Woo, Jason Andrach

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引用次数: 0

摘要

我们展示了一个单片结合传统晶体硅波导和超低损耗Si3N4波导(1.6dB/m)的光子平台。材料协整展示了高密度低损耗延迟和高速开关能力，传统上只有si3n4平台无法实现，从而实现高性能模拟光子。

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Monolithic Ultra-Low-Loss Si3N4 / Si Photonic Platform for High Delay Density

We demonstrate a photonic platform that monolithically combines traditional crystalline Si waveguides and ultra-low-loss Si3N4 waveguides (1.6dB/m) in a foundry-ready process. The material co-integration demonstrates high-density low loss delays and high-speed switch capabilities traditionally out of reach of Si3N4-only platforms, enabling high-performance analog photonics.

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来源期刊

2023 IEEE Silicon Photonics Conference (SiPhotonics)

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