一种v波段AlGaAs/InGaAs异质结FET MMIC介电谐振振荡器

Proceedings of 1994 IEEE GaAs IC Symposium Pub Date : 1994-10-16 DOI:10.1109/GAAS.1994.636912

M. Funabashi, K. Ohata, K. Onda, K. Hosoya, T. Inoue, M. Kuzuhara, K. Kanckawa, Y. Kobayashi

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引用次数: 30

摘要

本文报道了一种高性能v波段MMIC介质谐振振荡器。采用0.15 /spl mu/m栅极AlGaAs/InGaAs异质结FET的DRO在100 kHz离载波时表现出稳定的振荡，相位噪声为-88 dBc/Hz，在55.135 GHz时输出功率为3.7 dBm。在温度系数为+3.3 ppm//spl℃的介质谐振腔中，振荡频率稳定度为-1.9 ppm//spl℃。

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A V-band AlGaAs/InGaAs heterojunction FET MMIC dielectric resonator oscillator

This paper reports a high performance V-band MMIC dielectric resonator oscillator (DRO). The DRO utilizing a 0.15 /spl mu/m gate AlGaAs/InGaAs heterojunction FET has exhibited stabilized oscillation with low phase noise of -88 dBc/Hz at 100 kHz off-carrier and the output power of 3.7 dBm at 55.135 GHz. The oscillation frequency stability of -1.9 ppm//spl deg/C was obtained with a dielectric resonator of +3.3 ppm//spl deg/C temperature coefficient.

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Proceedings of 1994 IEEE GaAs IC Symposium

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