低损耗电容器用BaTiO3/REBa2Cu3Oy多层结构的介电性能

Yoshiyasu Moriguchi, Y. Tsuchiya, Y. Ichino, Y. Yoshida
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摘要

摘要:谐振电路的高Q值是无线电力传输的必要条件。电路中的电阻降低了Q因子;因此,重要的是使用具有低内阻的元件,如超导体。在这项研究中,我们着重于利用超导电极来降低电容器的内阻。我们在双轴取向的yba2cu3oy薄膜上制备了外延生长batio3薄膜的多层结构,并测量了其超导和介电性能。结果表明,该多层膜在86.1 K时表现出超导转变,在低于90 K时ESR大幅降低。电容密度的温度依赖性在265 K时达到峰值,与batio3的结构相变相吻合。多层结构的相对介电常数ε r为1.9 ~ 23.3,这可能是由于晶体取向较低所致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dielectric Properties of a BaTiO3/REBa2Cu3Oy Multilayered Structure for Low-Loss Capacitors
Synopsis : A high Q value for resonant circuits is necessary for wireless power transfer. The resistance in the circuit degrades the Q factor; thus, it is important to use elements with a low internal resistance such as superconductors. In this study, we focused on reducing the internal resistance in capacitors by using superconducting electrodes. We fabricated a multilayered structure with epitaxially grown BaTiO 3 films on biaxially oriented YBa 2 Cu 3 O y films and measured the superconducting and dielectric properties. As a result, the multilayered film showed superconducting transition at 86.1 K and a large reduction in ESR at temperatures below 90 K. The temperature dependence of the capacitance density peaks at 265 K and coincides with the structural phase transition of BaTiO 3 . The relative permittivity ε r of the multilayered structure was 1.9-23.3, possibly due to a lower crystalline orientation.
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