{"title":"RFIC集成电路技术选择的现状与未来方向","authors":"L. Larson","doi":"10.1109/CICC.1997.606607","DOIUrl":null,"url":null,"abstract":"This paper summarizes the technology tradeoffs that are involved in the implementation of radiofrequency integrated circuits for wireless communications. Radio transceiver circuits have a very broad range of requirements-including noise-figure, linearity, gain, power dissipation. The advantages and disadvantages of each of the competing technologies-Si CMOS, and BJT, Si/SiGe HBTs, and GaAs MESFETs, PHEMTs and HBTs are examined.","PeriodicalId":111737,"journal":{"name":"Proceedings of CICC 97 - Custom Integrated Circuits Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"265","resultStr":"{\"title\":\"Integrated circuit technology options for RFIC's-present status and future directions\",\"authors\":\"L. Larson\",\"doi\":\"10.1109/CICC.1997.606607\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper summarizes the technology tradeoffs that are involved in the implementation of radiofrequency integrated circuits for wireless communications. Radio transceiver circuits have a very broad range of requirements-including noise-figure, linearity, gain, power dissipation. The advantages and disadvantages of each of the competing technologies-Si CMOS, and BJT, Si/SiGe HBTs, and GaAs MESFETs, PHEMTs and HBTs are examined.\",\"PeriodicalId\":111737,\"journal\":{\"name\":\"Proceedings of CICC 97 - Custom Integrated Circuits Conference\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-05-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"265\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of CICC 97 - Custom Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.1997.606607\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of CICC 97 - Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.1997.606607","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Integrated circuit technology options for RFIC's-present status and future directions
This paper summarizes the technology tradeoffs that are involved in the implementation of radiofrequency integrated circuits for wireless communications. Radio transceiver circuits have a very broad range of requirements-including noise-figure, linearity, gain, power dissipation. The advantages and disadvantages of each of the competing technologies-Si CMOS, and BJT, Si/SiGe HBTs, and GaAs MESFETs, PHEMTs and HBTs are examined.
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