基于键合线互连的氮化镓智能电源模块

Yilong Yao, Hong Zhang, Fengtao Yang, Hang Kong, Yan Wang, Xiaobo Dong, Laili Wang, Kangping Wang
{"title":"基于键合线互连的氮化镓智能电源模块","authors":"Yilong Yao, Hong Zhang, Fengtao Yang, Hang Kong, Yan Wang, Xiaobo Dong, Laili Wang, Kangping Wang","doi":"10.1109/APEC43580.2023.10131222","DOIUrl":null,"url":null,"abstract":"Short switching time of gallium nitride high electrons mobility transistors (GaN HEMTs) cause much more challenge for their package and integration. This article1proposes a hybrid packaging method based on bonding wire technology. This interconnection method inevitably increases the parasitic inductance of drive loop, leading to crosstalk and gate oscillation. A driving strategy to suppress these phenomena is applied in the gate loop. Finally, a hybrid packaging intelligent power module combined with print circuit board and direct bonding ceramic is fabricated. The power loop stray inductance of GaN HEMT half bridge is reduced to 1.94nH according to the experiment result. Based on the GaN half bridge of designed module, a 2.14kW boost converter has been built in this paper and its peak efficiency reaches 98.28%.","PeriodicalId":151216,"journal":{"name":"2023 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Gallium Nitride Intelligent Power Module Based on Bonding Wire Interconnection\",\"authors\":\"Yilong Yao, Hong Zhang, Fengtao Yang, Hang Kong, Yan Wang, Xiaobo Dong, Laili Wang, Kangping Wang\",\"doi\":\"10.1109/APEC43580.2023.10131222\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Short switching time of gallium nitride high electrons mobility transistors (GaN HEMTs) cause much more challenge for their package and integration. This article1proposes a hybrid packaging method based on bonding wire technology. This interconnection method inevitably increases the parasitic inductance of drive loop, leading to crosstalk and gate oscillation. A driving strategy to suppress these phenomena is applied in the gate loop. Finally, a hybrid packaging intelligent power module combined with print circuit board and direct bonding ceramic is fabricated. The power loop stray inductance of GaN HEMT half bridge is reduced to 1.94nH according to the experiment result. Based on the GaN half bridge of designed module, a 2.14kW boost converter has been built in this paper and its peak efficiency reaches 98.28%.\",\"PeriodicalId\":151216,\"journal\":{\"name\":\"2023 IEEE Applied Power Electronics Conference and Exposition (APEC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE Applied Power Electronics Conference and Exposition (APEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEC43580.2023.10131222\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE Applied Power Electronics Conference and Exposition (APEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC43580.2023.10131222","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

氮化镓高电子迁移率晶体管(GaN hemt)的开关时间短,给其封装和集成带来了很大的挑战。本文提出了一种基于键合线技术的混合封装方法。这种互连方式不可避免地增加了驱动回路的寄生电感,导致串扰和门振荡。在门环中采用了抑制这些现象的驱动策略。最后,制作了一种结合印刷电路板和直键陶瓷的混合封装智能电源模块。实验结果表明,GaN HEMT半桥的功率回路杂散电感降至1.94nH。基于所设计模块的GaN半桥,本文搭建了一个2.14kW的升压变换器,其峰值效率达到98.28%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Gallium Nitride Intelligent Power Module Based on Bonding Wire Interconnection
Short switching time of gallium nitride high electrons mobility transistors (GaN HEMTs) cause much more challenge for their package and integration. This article1proposes a hybrid packaging method based on bonding wire technology. This interconnection method inevitably increases the parasitic inductance of drive loop, leading to crosstalk and gate oscillation. A driving strategy to suppress these phenomena is applied in the gate loop. Finally, a hybrid packaging intelligent power module combined with print circuit board and direct bonding ceramic is fabricated. The power loop stray inductance of GaN HEMT half bridge is reduced to 1.94nH according to the experiment result. Based on the GaN half bridge of designed module, a 2.14kW boost converter has been built in this paper and its peak efficiency reaches 98.28%.
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