GTO的模拟行为建模

Y. Azzouz, H. Schneider, L. Coyitangiye, B. Ravelo
{"title":"GTO的模拟行为建模","authors":"Y. Azzouz, H. Schneider, L. Coyitangiye, B. Ravelo","doi":"10.1155/2011/623039","DOIUrl":null,"url":null,"abstract":"An analog behavioral model of high power gate turn-off thyristor (GTO) is developed in this paper. The fundamental methodology for the modeling of this power electronic circuit is based on the use of the realistic diode consideration of non-linear junctions. This modeling technique enables to perform different simulations taking into account the turn-on and turn-off transient behaviors in real-time. The equivalent circuits were simulated with analog software developed in our laboratory. It was shown that the tested simple and compact model allows the generation of accurate physical characteristics of power thyristors under dynamic conditions. The model understudy was validated with analog simulations based on operational amplifier devices.","PeriodicalId":412593,"journal":{"name":"Advances in Power Electronic","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analogue Behavioral Modeling of GTO\",\"authors\":\"Y. Azzouz, H. Schneider, L. Coyitangiye, B. Ravelo\",\"doi\":\"10.1155/2011/623039\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An analog behavioral model of high power gate turn-off thyristor (GTO) is developed in this paper. The fundamental methodology for the modeling of this power electronic circuit is based on the use of the realistic diode consideration of non-linear junctions. This modeling technique enables to perform different simulations taking into account the turn-on and turn-off transient behaviors in real-time. The equivalent circuits were simulated with analog software developed in our laboratory. It was shown that the tested simple and compact model allows the generation of accurate physical characteristics of power thyristors under dynamic conditions. The model understudy was validated with analog simulations based on operational amplifier devices.\",\"PeriodicalId\":412593,\"journal\":{\"name\":\"Advances in Power Electronic\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-07-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advances in Power Electronic\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1155/2011/623039\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Power Electronic","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2011/623039","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

建立了大功率门关晶闸管(GTO)的模拟行为模型。这种电力电子电路建模的基本方法是基于考虑非线性结的实际二极管的使用。这种建模技术能够实时地考虑到打开和关闭瞬态行为,从而执行不同的模拟。利用实验室开发的模拟软件对等效电路进行了仿真。实验结果表明,所建立的模型简单、紧凑,能够准确地反映功率晶闸管在动态条件下的物理特性。基于运放器件的模拟仿真验证了模型的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analogue Behavioral Modeling of GTO
An analog behavioral model of high power gate turn-off thyristor (GTO) is developed in this paper. The fundamental methodology for the modeling of this power electronic circuit is based on the use of the realistic diode consideration of non-linear junctions. This modeling technique enables to perform different simulations taking into account the turn-on and turn-off transient behaviors in real-time. The equivalent circuits were simulated with analog software developed in our laboratory. It was shown that the tested simple and compact model allows the generation of accurate physical characteristics of power thyristors under dynamic conditions. The model understudy was validated with analog simulations based on operational amplifier devices.
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