{"title":"利用PECVD在镍催化剂层玻璃衬底上生长碳纳米管及其场发射性能","authors":"L. Xin, W. Van, Weihua Liu, Changchun Zhu","doi":"10.1109/IVNC.2006.335479","DOIUrl":null,"url":null,"abstract":"The effects of NH3 on the growth characteristics of carbon nanotubes (CNTs) were systematically investigated in plasma enhanced chemical vapor deposition (PECVD) with C2H2 as a carbon source. The well aligned CNTs were grown from the Ni nanoparticles by plasma-enhanced chemical vapor deposition (PECVD). CNT films were formed with uniform surface morphology instead of nanotube-features. High-resolution transmission electron microscopy revealed that nanotubes grow from the boot with high adhesive ability. The lowest suitable growth temperature is around 560degC. The threshold field is smaller than 2 v/mum, the current within linear extend is from 200 to 700 mA. The luminescence of the CNTs film is not uniform, which resulted from the reduction of field screening effect","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth and field emission properties of carbon nanotubes on glass substrate of Ni catalyst layer using PECVD\",\"authors\":\"L. Xin, W. Van, Weihua Liu, Changchun Zhu\",\"doi\":\"10.1109/IVNC.2006.335479\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of NH3 on the growth characteristics of carbon nanotubes (CNTs) were systematically investigated in plasma enhanced chemical vapor deposition (PECVD) with C2H2 as a carbon source. The well aligned CNTs were grown from the Ni nanoparticles by plasma-enhanced chemical vapor deposition (PECVD). CNT films were formed with uniform surface morphology instead of nanotube-features. High-resolution transmission electron microscopy revealed that nanotubes grow from the boot with high adhesive ability. The lowest suitable growth temperature is around 560degC. The threshold field is smaller than 2 v/mum, the current within linear extend is from 200 to 700 mA. The luminescence of the CNTs film is not uniform, which resulted from the reduction of field screening effect\",\"PeriodicalId\":108834,\"journal\":{\"name\":\"2006 19th International Vacuum Nanoelectronics Conference\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-07-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 19th International Vacuum Nanoelectronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVNC.2006.335479\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 19th International Vacuum Nanoelectronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC.2006.335479","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth and field emission properties of carbon nanotubes on glass substrate of Ni catalyst layer using PECVD
The effects of NH3 on the growth characteristics of carbon nanotubes (CNTs) were systematically investigated in plasma enhanced chemical vapor deposition (PECVD) with C2H2 as a carbon source. The well aligned CNTs were grown from the Ni nanoparticles by plasma-enhanced chemical vapor deposition (PECVD). CNT films were formed with uniform surface morphology instead of nanotube-features. High-resolution transmission electron microscopy revealed that nanotubes grow from the boot with high adhesive ability. The lowest suitable growth temperature is around 560degC. The threshold field is smaller than 2 v/mum, the current within linear extend is from 200 to 700 mA. The luminescence of the CNTs film is not uniform, which resulted from the reduction of field screening effect
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