晶圆级ESD测试研究

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI:10.1109/EOSESD.2000.890021

K. Yokoi, T. Watanabe

{"title":"晶圆级ESD测试研究","authors":"K. Yokoi, T. Watanabe","doi":"10.1109/EOSESD.2000.890021","DOIUrl":null,"url":null,"abstract":"This paper describes the possibility of performing the human body model (HBM) and machine model (MM) tests on a wafer. HBM capability when performed on a wafer is almost identical to that of a package; however, MM capability performed on a wafer is almost double that of a package due to the degradation of ESD pulses by parasitics in the equipment.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A study of wafer level ESD testing\",\"authors\":\"K. Yokoi, T. Watanabe\",\"doi\":\"10.1109/EOSESD.2000.890021\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the possibility of performing the human body model (HBM) and machine model (MM) tests on a wafer. HBM capability when performed on a wafer is almost identical to that of a package; however, MM capability performed on a wafer is almost double that of a package due to the degradation of ESD pulses by parasitics in the equipment.\",\"PeriodicalId\":332394,\"journal\":{\"name\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EOSESD.2000.890021\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2000.890021","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文介绍了在硅片上进行人体模型(HBM)和机器模型(MM)测试的可能性。当在晶圆上执行HBM时，其性能几乎与封装相同;然而，由于设备中的寄生物对ESD脉冲的影响，在晶圆上执行的MM能力几乎是封装的两倍。

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A study of wafer level ESD testing

This paper describes the possibility of performing the human body model (HBM) and machine model (MM) tests on a wafer. HBM capability when performed on a wafer is almost identical to that of a package; however, MM capability performed on a wafer is almost double that of a package due to the degradation of ESD pulses by parasitics in the equipment.

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Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)

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