用于MIR - LWIR的硅用ZnS增透涂层

2021 IEEE 17th International Conference on Group IV Photonics (GFP) Pub Date : 2021-12-01 DOI:10.1109/GFP51802.2021.9673918

Christian De Vita, M. Asa, M. Urquia, M. E. Castagna, C. Somaschini, F. Morichetti, A. Melloni

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引用次数: 0

摘要

设计、制作并验证了一种工作在10 μm的硅器件抗反射涂层(ARC)。电弧是基于ZnS和Al2O3，并在室温下沉积。考虑了单侧和双面电弧，表明相对于未涂覆的硅器件，传输增强分别为66%和89%。

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ZnS antireflection coating for Silicon for MIR - LWIR applications

An antireflection coating (ARC) for silicon devices operating at 10 μm has been designed, fabricated and validated. The ARC is based on ZnS and Al2O3 and is deposited at room temperature. Both single and double side ARCs are considered, demonstrating a transmission enhancement respectively of 66% and 89% with respect to an uncoated silicon device.

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2021 IEEE 17th International Conference on Group IV Photonics (GFP)

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