{"title":"1 GHz E类LDMOS功率放大器","authors":"A. Ådahl, H. Zirath","doi":"10.1109/EUMA.2003.340946","DOIUrl":null,"url":null,"abstract":"A class E power amplifier working at 1 GHz and with an LDMOS transistor as switching element has been developed. The circuit is implemented with lumped and distributed elements. An output power of 6.2 W at 69 % drain efficiency with a gain of 11 dB was obtained at 1 GHz. Both simulations and measurements of the amplifier are presented within this paper. This is to our knowledge the highest efficiency and output power reported for a class E amplifier at 1 GHz.","PeriodicalId":156210,"journal":{"name":"2003 33rd European Microwave Conference, 2003","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"An 1 GHz Class E LDMOS Power Amplifier\",\"authors\":\"A. Ådahl, H. Zirath\",\"doi\":\"10.1109/EUMA.2003.340946\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A class E power amplifier working at 1 GHz and with an LDMOS transistor as switching element has been developed. The circuit is implemented with lumped and distributed elements. An output power of 6.2 W at 69 % drain efficiency with a gain of 11 dB was obtained at 1 GHz. Both simulations and measurements of the amplifier are presented within this paper. This is to our knowledge the highest efficiency and output power reported for a class E amplifier at 1 GHz.\",\"PeriodicalId\":156210,\"journal\":{\"name\":\"2003 33rd European Microwave Conference, 2003\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 33rd European Microwave Conference, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.2003.340946\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 33rd European Microwave Conference, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.2003.340946","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A class E power amplifier working at 1 GHz and with an LDMOS transistor as switching element has been developed. The circuit is implemented with lumped and distributed elements. An output power of 6.2 W at 69 % drain efficiency with a gain of 11 dB was obtained at 1 GHz. Both simulations and measurements of the amplifier are presented within this paper. This is to our knowledge the highest efficiency and output power reported for a class E amplifier at 1 GHz.
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