氧硅酸单晶组成改性对脉冲激光辐射自作用效应表现的影响

International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014) Pub Date : 2014-05-26 DOI:10.1109/OMEE.2014.6912399

V. Gayvoronsky, M. Brodyn, A. Uklein, I. Filipov, A. Popov, V. Kononets, O. Sidletskiy

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引用次数: 0

摘要

本文首次实现了基于皮秒激光脉冲自作用的氧化硅酸单晶诊断。发现光致折射率变化对Gd取代Lu原子和Ce掺杂到LSO/LGSO晶体基质中具有很高的敏感性。这种效应可能是由于氧空位激发引起的电子脱陷-复合过程效率不同所致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of composition modification of oxyorthosilicates single crystals on pulsed laser radiation self-action effect manifestation

For the first time the diagnostics of oxyorthosilicates single crystals based on self-action of picosecond range laser pulses at 1064 nm has been performed. It was found high sensitivity of the photoinduced refractive index variation to the substitution of the Lu atoms by Gd as well as the admixture of Ce to the LSO/LGSO crystalline matrix. The effect could be attributed to the different electron detrapping-recombination processes efficiencies due to the oxygen vacancies excitation.

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International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)

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