基于CMOS保护环的衬底噪声抑制研究

2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT) Pub Date : 2016-06-01 DOI:10.1109/ICMMT.2016.7761822

Le Zhang, Xiao-peng Yu, E. Li

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引用次数: 1

摘要

本文介绍了使用s参数测量高达数十GHz的衬底噪声耦合。设计了不同类型的保护环，包括p+和n+扩散保护环，以表征射频性能。与这些方案相比，还创建了深井结构并进行了讨论。研究和分析了各种保护环尺寸参数对隔振性能的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The investigation of the substrates noise suppression using guard rings in CMOS technology

This paper presents the substrate noise coupling using S-parameters measurement upto tens of GHz. Different types of the guard rings including p+ and n+ diffusion guard ring have been designed to characterize the RF performance. Compared with these schemes, deep-n-well (DNW) structures were created and discussed as well. The effect of various guard ring dimension parameters on the isolation performance was also investigated and analyzed.

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2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT)

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