H. Cheng, W. Chien, M. BrightSky, Y. Ho, Y. Zhu, A. Ray, R. Bruce, W. Kim, C. Yeh, H. Lung, C. Lam
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Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material
Attempts to improve the retention so far must sacrifice switching speed. This work explores new phase change material based on pseudobinary GaSb-Ge system. The resulting new phase-change material has demonstrated fast switching speed of 80 ns, long endurance of 1G cycles and excellent data retention that survives 250°C-300 hrs. The 10 years-220°C data retention is the best ever reported. It is also the fastest material that can pass the solder bonding criteria for embedded automotive applications.
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