Michitaka Yamamoto, T. Matsumae, Y. Kurashima, H. Takagi, T. Miyake, T. Suga, T. Itoh, E. Higurashi
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Wafer-scale Au-Au surface activated bonding using atmospheric-pressure plasma
Wafer-scale surface activated bonding (SAB) using intermediate layers of ultra-thin Au films was performed by using glow-discharge-type atmospheric-pressure (AP) plasma with a direct plasma system. The entire process, from surface activation to bonding, was performed in ambient air using AP plasma. While partial wafer bonding was obtained with 2.5 s plasma treatment, strong bonding was obtained with both 10 s and 30 s plasma treatment, and the Si substrates were sometimes broken in a razor blade test.
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