在毫瓦和亚毫瓦直流功耗下工作的单片l波段放大器

IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1992-06-01 DOI:10.1109/MCS.1992.185984

K. Cioffi, Rockwell

{"title":"在毫瓦和亚毫瓦直流功耗下工作的单片l波段放大器","authors":"K. Cioffi, Rockwell","doi":"10.1109/MCS.1992.185984","DOIUrl":null,"url":null,"abstract":"Monolithic L-band low-noise amplifiers (LNAs) operating at milliwatt and sub-milliwatt DC power consumptions were designed and fabricated. A maximum gain/power quotient of 19.1 dB/mW was recorded at a frequency of 1.25 GHz with a cascade of two monolithic microwave integrated circuit (MMIC) amplifiers yielding a total gain of 15.3 dB on a total power consumption of just 800 mu W. This is believed to be the highest gain/power quotient ever reported for a monolithic circuit at L-band. The ultralow power consumptions were obtained with a standard foundry process using an enhancement-mode MESFET with a variety of design techniques. Yields obtained on two 4-in GaAs wafers were 96-100%.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":"{\"title\":\"Monolithic L-band amplifiers operating at milliwatt and sub-milliwatt DC power consumptions\",\"authors\":\"K. Cioffi, Rockwell\",\"doi\":\"10.1109/MCS.1992.185984\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Monolithic L-band low-noise amplifiers (LNAs) operating at milliwatt and sub-milliwatt DC power consumptions were designed and fabricated. A maximum gain/power quotient of 19.1 dB/mW was recorded at a frequency of 1.25 GHz with a cascade of two monolithic microwave integrated circuit (MMIC) amplifiers yielding a total gain of 15.3 dB on a total power consumption of just 800 mu W. This is believed to be the highest gain/power quotient ever reported for a monolithic circuit at L-band. The ultralow power consumptions were obtained with a standard foundry process using an enhancement-mode MESFET with a variety of design techniques. Yields obtained on two 4-in GaAs wafers were 96-100%.<<ETX>>\",\"PeriodicalId\":336288,\"journal\":{\"name\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"33\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1992.185984\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.185984","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 33

摘要

设计并制作了工作在毫瓦和亚毫瓦直流功耗下的l波段单片低噪声放大器。在1.25 GHz频率下，两个单片微波集成电路(MMIC)放大器级联，最大增益/功率商为19.1 dB/mW，总增益为15.3 dB，总功耗仅为800 μ w，这被认为是l波段单片电路的最高增益/功率商。超低功耗是通过采用多种设计技术的增强型MESFET标准铸造工艺获得的。在两个4-in GaAs晶圆上获得的产率为96-100%。

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Monolithic L-band amplifiers operating at milliwatt and sub-milliwatt DC power consumptions

Monolithic L-band low-noise amplifiers (LNAs) operating at milliwatt and sub-milliwatt DC power consumptions were designed and fabricated. A maximum gain/power quotient of 19.1 dB/mW was recorded at a frequency of 1.25 GHz with a cascade of two monolithic microwave integrated circuit (MMIC) amplifiers yielding a total gain of 15.3 dB on a total power consumption of just 800 mu W. This is believed to be the highest gain/power quotient ever reported for a monolithic circuit at L-band. The ultralow power consumptions were obtained with a standard foundry process using an enhancement-mode MESFET with a variety of design techniques. Yields obtained on two 4-in GaAs wafers were 96-100%.<>

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IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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