金属氧化物隧道晶体管的基本操作和设计考虑

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) Pub Date : 1998-10-19 DOI:10.1109/IWCE.1998.742738

F. Buot, R. Rendell, E. Snow, P. Campbell, D. Park, C. Marrian, R. Magno

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引用次数: 0

摘要

给出了不使用任何掺杂剂的新型场效应晶体管的理想隧穿操作、材料和几何设计考虑。对非理想的性能影响，如散射和多余空间电荷的影响，也进行了模拟。

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Fundamental operation and design considerations for metal-oxide tunnel transistors

The ideal tunneling operation, materials, and geometrical design considerations for novel field-effect transistors which do not employ dopants of any kind are given. Nonideal effects on the performance, such as the effects of scattering and excess-space charge, are also simulated.

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来源期刊

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)

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