用于商业应用的1.2 W, 60%效率的功率放大器IC

Proceedings of 1994 IEEE GaAs IC Symposium Pub Date : 1994-10-16 DOI:10.1109/GAAS.1994.636961

J. Naber, J. Griffiths, J. Salvey

{"title":"用于商业应用的1.2 W, 60%效率的功率放大器IC","authors":"J. Naber, J. Griffiths, J. Salvey","doi":"10.1109/GAAS.1994.636961","DOIUrl":null,"url":null,"abstract":"A 1.2 Watt, 6 V, 60% efficient, dual bias power amplifier GaAs IC operating in the AMPS (Advanced Mobile Phone service) band of 824 MHz to 849 MHz has been demonstrated. The IC is a two stage, class AB biased amplifier that has 24 dB of power gain. The input return loss is 12 dB over the band. The IC is packaged in a SOIC 16-pin plastic package that measures 30 mm/sup 2/.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 1.2 W, 60% efficient power amplifier IC for commercial applications\",\"authors\":\"J. Naber, J. Griffiths, J. Salvey\",\"doi\":\"10.1109/GAAS.1994.636961\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1.2 Watt, 6 V, 60% efficient, dual bias power amplifier GaAs IC operating in the AMPS (Advanced Mobile Phone service) band of 824 MHz to 849 MHz has been demonstrated. The IC is a two stage, class AB biased amplifier that has 24 dB of power gain. The input return loss is 12 dB over the band. The IC is packaged in a SOIC 16-pin plastic package that measures 30 mm/sup 2/.\",\"PeriodicalId\":328819,\"journal\":{\"name\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1994.636961\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636961","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

一个1.2瓦，6 V, 60%效率，双偏置功率放大器GaAs IC工作在AMPS(高级移动电话服务)频段824 MHz至849 MHz已经证明。该集成电路为两级AB类偏置放大器，功率增益为24db。整个频带的输入回波损耗为12db。该IC封装在SOIC 16针塑料封装中，尺寸为30mm /sup /。

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A 1.2 W, 60% efficient power amplifier IC for commercial applications

A 1.2 Watt, 6 V, 60% efficient, dual bias power amplifier GaAs IC operating in the AMPS (Advanced Mobile Phone service) band of 824 MHz to 849 MHz has been demonstrated. The IC is a two stage, class AB biased amplifier that has 24 dB of power gain. The input return loss is 12 dB over the band. The IC is packaged in a SOIC 16-pin plastic package that measures 30 mm/sup 2/.

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Proceedings of 1994 IEEE GaAs IC Symposium

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