利用修饰电子停止层的周期性增益介质提高红色谐振腔发光二极管的效率

Digest of the 9th International Conference on Optical Internet (COIN 2010) Pub Date : 2010-07-11 DOI:10.1109/COIN.2010.5546680

V. Lysak, C. Y. Park, K. W. Park, Y. T. Lee

{"title":"利用修饰电子停止层的周期性增益介质提高红色谐振腔发光二极管的效率","authors":"V. Lysak, C. Y. Park, K. W. Park, Y. T. Lee","doi":"10.1109/COIN.2010.5546680","DOIUrl":null,"url":null,"abstract":"The analysis of electro-optical properties of 635 nm InGaP/InGaAlP resonant-cavity light-emitting diodes (RCLED) with AlGaAs mirrors is presented. We show that including the periodic gain medium with slightly p-doped electron stop layer in both side of active layer improves the efficiency of such device due to increasing the electron capture efficiency in the quantum wells and decreasing the electrical field across the active layer.","PeriodicalId":388031,"journal":{"name":"Digest of the 9th International Conference on Optical Internet (COIN 2010)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improvement of efficiency for red resonantcavity light-emitting diodes using periodic gain medium with modified electron stopped layers\",\"authors\":\"V. Lysak, C. Y. Park, K. W. Park, Y. T. Lee\",\"doi\":\"10.1109/COIN.2010.5546680\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The analysis of electro-optical properties of 635 nm InGaP/InGaAlP resonant-cavity light-emitting diodes (RCLED) with AlGaAs mirrors is presented. We show that including the periodic gain medium with slightly p-doped electron stop layer in both side of active layer improves the efficiency of such device due to increasing the electron capture efficiency in the quantum wells and decreasing the electrical field across the active layer.\",\"PeriodicalId\":388031,\"journal\":{\"name\":\"Digest of the 9th International Conference on Optical Internet (COIN 2010)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of the 9th International Conference on Optical Internet (COIN 2010)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COIN.2010.5546680\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of the 9th International Conference on Optical Internet (COIN 2010)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COIN.2010.5546680","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

对635 nm带AlGaAs反射镜的InGaP/InGaAlP谐振腔发光二极管的电光特性进行了分析。我们发现，在有源层两侧加入含有少量p掺杂电子停止层的周期性增益介质，由于增加了量子阱中的电子捕获效率和减小了有源层上的电场，从而提高了器件的效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Improvement of efficiency for red resonantcavity light-emitting diodes using periodic gain medium with modified electron stopped layers

The analysis of electro-optical properties of 635 nm InGaP/InGaAlP resonant-cavity light-emitting diodes (RCLED) with AlGaAs mirrors is presented. We show that including the periodic gain medium with slightly p-doped electron stop layer in both side of active layer improves the efficiency of such device due to increasing the electron capture efficiency in the quantum wells and decreasing the electrical field across the active layer.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Digest of the 9th International Conference on Optical Internet (COIN 2010)

自引率

0.00%

发文量