1.3µm InAs/GaAs高密度量子点激光器

2009 IEEE LEOS Annual Meeting Conference Proceedings Pub Date : 2009-12-01 DOI:10.1109/LEOS.2009.5343392

Y. Tanaka, M. Ishida, K. Takada, Y. Maeda, T. Akiyama, T. Yamamoto, Haizhi Song, M. Yamaguchi, Y. Nakata, K. Nishi, M. Sugawara, Y. Arakawa

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引用次数: 1

摘要

我们报道了新开发的高密度量子点激光器，该激光器提供了极高的温度不敏感10.3 Gb/s的操作和高达20 Gb/s的高速操作，这是1.3 μ m量子点激光器的首次演示。

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1.3 µm InAs/GaAs high-density quantum dot lasers

We report on newly developed high-density quantum-dot lasers that provide extremely temperature-insensitive 10.3 Gb/s operation and higher-speed operation up to 20 Gb/s which is the first demonstration in 1.3 mum quantum-dot lasers.

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2009 IEEE LEOS Annual Meeting Conference Proceedings

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