基于HfO2/Ti的垂直RRAM的性能和可变性研究

2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS) Pub Date : 2014-10-01 DOI:10.1109/NVMTS.2014.7060867

G. Piccolboni, G. Molas, C. Carabasse, J. Nodin, C. Pellissier, P. Brianceau, E. Vianello, O. Pollet, F. Perrin, J. Cluzel, A. Toffoli, F. Aussenac, V. Delaye, G. Ghibaudo, B. De Salvo, L. Perniola

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引用次数: 3

摘要

提出了一种易于制造、低成本的侧壁TiN/HfO2/Ti垂直电阻式RAM (VRRAM)器件。制备了底部电极厚度低至10nm的器件，并对其进行了表征。分别测量2V、0.5V和-0.5V的成形电压、SET电压和RESET电压。在200℃下加热105s后，保持了10年的稳定记忆窗口。评估了缩放对工作电压和存储电阻水平的影响，显示出随着电池直径的减小，SET和RESET电压降低。最后，对周期间电阻变异性进行了分析。

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Investigation of HfO2/Ti based vertical RRAM - Performances and variability

An easy-to-fabricate, low-cost, sidewall TiN/HfO2/Ti vertical resistive RAM (VRRAM) device is proposed. Devices with bottom electrode thickness down to 10nm were fabricated and characterized. Forming, SET and RESET voltages of respectively 2V, 0.5V and -0.5V were measured. A stable memory window of one decade was maintained after 105s at 200°C. The impact of scaling on the operating voltages and memory resistance levels was evaluated, showing a SET and RESET voltage reduction as the cell diameter is reduced. Finally the cycle-to-cycle resistance variability was addressed.

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2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)

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