基于0.18 μm SiGe BiCMOS技术的40gb /s NRZ无电感跨阻放大器

2021 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS) Pub Date : 2021-11-16 DOI:10.1109/ISPACS51563.2021.9650922

H. Hsu, Xuan-Yi Ye, Jau‐Ji Jou, Tien-Tsorng Shih

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引用次数: 1

摘要

本研究采用台积电0.18 μm SiGe BiCMOS技术，实现了一种无电感宽带跨阻放大器(TIA)。稳压级联电路用于TIA的输入级。核心放大器是一个与微分器并联的全差分放大器，能够增强TIA的带宽。TIA的差分跨阻增益为39.4 dBΩ，带宽为32.9 GHz，平均输入参考电流噪声密度为37 pA/√Hz。TIA的功耗为77 mW，电源电压为3.3 V，芯片面积为0.45 mm2(包括焊盘)。在芯片测试中，测量了25和40 gb /s的不归零眼图，并且足够清晰。

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A 40-Gb/s NRZ Inductorless Transimpedance Amplifier in a 0.18-μm SiGe BiCMOS Technology

In this study, an inductorless broadband transimpedance amplifier (TIA) is implemented using TSMC 0.18-μm SiGe BiCMOS technology. The regulated cascade circuit is used for the input stage of the TIA. The core amplifier is a fully differential amplifier paralleling with a differentiator that is capable of enhancing the bandwidth of the TIA. The TIA has a differential transimpedance gain of 39.4 dBΩ, a bandwidth of 32.9 GHz, and an average input-referred current noise density of 37 pA/√Hz. The TIA has a power consumption of 77 mW with a supply voltage of 3.3 V, and the chip area is 0.45 mm2 including pads. In the chip testing, the 25- and 40-Gb/s non-return-to-zero eye diagrams are measured and sufficiently clear.

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2021 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS)

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