多聚硅/ hf基高k氧化物界面上费米能级钉钉的物理研究

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. Pub Date : 2004-06-15 DOI:10.1109/VLSIT.2004.1345421

K. Shiraishi, K. Yamada, K. Torii, Y. Akasaka, K. Nakajima, M. Kohno, T. Chikyo, H. Kitajima, T. Arikado

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引用次数: 38

摘要

我们报道了离子hf基电介质中O空位(Vo)的形成以及随后的电子通过界面转移到多晶硅栅极中，肯定会导致大量的平带(Vfb)位移，特别是对于p+栅极misfet。我们的理论可以系统地再现与hf基电介质相关的实验，并为栅极/高k氧化物界面控制提供指导原则。

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Physics in Fermi level pinning at the polySi/Hf-based high-k oxide interface

We report that O vacancy (Vo) formation in ionic Hf-based dielectrics and subsequent electron transfer into poly Si gates across the interface, definitely cause substantial flat band (Vfb) shifts especially for p+ gate MISFETs. Our theory can systematically reproduce experiments related to Hf-based dielectrics, and gives a guiding principle towards gate/high-k oxide interface control.

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Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.

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