基于硅波导集成ge2sb2te5的亚纳焦耳电光开关

International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA) Pub Date : 2019-11-11 DOI:10.1364/isst.2019.jw4a.76

Jagriti Ahuja, Shubham Singh, Nadir Ali, R. Kumar

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引用次数: 0

摘要

我们报道了在1.55µm下工作的1×1非易失性开关的电热研究，使用Ge2Sb2Te5的可逆相变。该开关以亚纳米焦耳开关能量提供26.43 dB消光比和1.62 dB插入损耗。

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Sub-Nanojoule Electro-Optic Switching Using Ge2Sb2Te5Integrated on Silicon Waveguide

We report electro-thermal investigation of 1×1 non-volatile switch operating at 1.55 µm, using reversible phase change in Ge2Sb2Te5. The switch provides 26.43 dB extinction ratio and 1.62 dB insertion loss with sub-nano joule switching energy.

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International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA)

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