{"title":"CNT和SiNW建模用于双栅双极逻辑电路设计","authors":"Xuan Hu, Wesley H. Brigner, J. Friedman","doi":"10.1049/PBCS039E_CH8","DOIUrl":null,"url":null,"abstract":"The book chapter surveys available FED models and analyzes the utility of these device models for ambipolar logic circuit design to enable the reader to determine which model is best suited for a particular application. The models have been grouped according to their underlying approaches and their ability to perform the desired model characteristics. Where the group names do not specify otherwise, these groups are static with fixed drain and source nodes.","PeriodicalId":270370,"journal":{"name":"Functionality-Enhanced Devices An alternative to Moore's Law","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"CNT and SiNW modeling for dual-gate ambipolar logic circuit design\",\"authors\":\"Xuan Hu, Wesley H. Brigner, J. Friedman\",\"doi\":\"10.1049/PBCS039E_CH8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The book chapter surveys available FED models and analyzes the utility of these device models for ambipolar logic circuit design to enable the reader to determine which model is best suited for a particular application. The models have been grouped according to their underlying approaches and their ability to perform the desired model characteristics. Where the group names do not specify otherwise, these groups are static with fixed drain and source nodes.\",\"PeriodicalId\":270370,\"journal\":{\"name\":\"Functionality-Enhanced Devices An alternative to Moore's Law\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Functionality-Enhanced Devices An alternative to Moore's Law\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/PBCS039E_CH8\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Functionality-Enhanced Devices An alternative to Moore's Law","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/PBCS039E_CH8","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CNT and SiNW modeling for dual-gate ambipolar logic circuit design
The book chapter surveys available FED models and analyzes the utility of these device models for ambipolar logic circuit design to enable the reader to determine which model is best suited for a particular application. The models have been grouped according to their underlying approaches and their ability to perform the desired model characteristics. Where the group names do not specify otherwise, these groups are static with fixed drain and source nodes.
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